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This international standard provides a method for evaluating whether a bypass diode (BD) as mounted in the module is susceptible to thermal runaway or if there is sufficient cooling for it to survive the transition from forward bias operation to reverse bias operation without overheating.
Author | VDE |
---|---|
Editor | VDE |
Document type | Standard |
Format | Paper |
ICS | 27.160 : Solar energy engineering
|
Number of pages | 17 |
Replace | DIN EN 62979 (2016-04) |
Cross references | EN 62979 (2017-10), IDT |
Weight(kg.) | 0.1289 |
Year | 2018 |
Document history | DIN EN 62979 (2018-09) |
Country | Germany |
Keyword | EN 62979;62979 |